Self-aligned nanowire formation using double patterning

ABSTRACT

A method includes forming a pattern-reservation layer over a semiconductor substrate. The semiconductor substrate has a major surface. A first self-aligned multi-patterning process is performed to pattern a pattern-reservation layer. The remaining portions of the pattern-reservation layer include pattern-reservation strips extending in a first direction that is parallel to the major surface of the semiconductor substrate. A second self-aligned multi-patterning process is performed to pattern the pattern-reservation layer in a second direction parallel to the major surface of the semiconductor substrate. The remaining portions of the pattern-reservation layer include patterned features. The patterned features are used as an etching mask to form semiconductor nanowires by etching the semiconductor substrate.

BACKGROUND

Double patterning is a technology developed for lithography to enhancefeature density in integrated circuits. Typically, the lithographytechnology is used for forming features of integrated circuits onwafers. The lithography technology involves applying a photo resist, anddefining patterns in the photo resist. The patterns in the photo resistare first defined in a lithography mask, and are implemented either bythe transparent portions or by the opaque portions of the lithographymask. The patterns in the lithography mask are transferred to the photoresist through an exposure using the lithography mask, followed by thedevelopment of the photo resist. The patterns in the patterned photoresist are then transferred to the manufactured features, which areformed on a wafer.

With the increasing down-scaling of integrated circuits, the opticalproximity effect posts an increasingly greater problem. When twoseparate features are too close to each other, the optical proximityeffect may cause the features to short to each other. To solve such aproblem, double patterning technology is introduced. The closely locatedfeatures are separated to two masks of a same double-patterning maskset, with both masks used to form features that would have been formedusing a single mask. In each of the masks, the distances between thefeatures are increased over the distances between the features in theotherwise single mask, and hence the optical proximity effect isreduced, or substantially eliminated.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1 through 22B illustrate the perspective views and top views ofintermediate stages in the formation of semiconductor nanowires inaccordance with some embodiments;

FIG. 23 illustrates the cross-sectional view of a transistor inaccordance with some embodiments, wherein the transistor includessemiconductor nanowires;

FIG. 24 illustrates nanowires arranged as a plurality of rows andcolumns in accordance with some embodiments, with the rows perpendicularto the columns; and

FIG. 25 illustrates nanowires arranged as a plurality of rows andcolumns in accordance with some embodiments, with the rows neitherperpendicular to nor parallel to the columns.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “underlying,” “below,”“lower,” “overlying,” “upper” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

A transistor including nanowires and the method of forming the same areprovided in accordance with various exemplary embodiments. Theintermediate stages of forming the transistor are illustrated. Thevariations of the embodiments are discussed. Throughout the variousviews and illustrative embodiments, like reference numbers are used todesignate like elements.

FIGS. 1 through 22B illustrate the perspective views and top views ofintermediate stages in the formation of semiconductor nanowires inaccordance with some embodiments. FIG. 1 illustrates wafer 100, whichincludes substrate 20 and overlying layers. Substrate 20 may be formedof a semiconductor material such as silicon, silicon germanium, a III-Vcompound semiconductor, or the like. In some embodiments, substrate 20is a crystalline semiconductor substrate such as a crystalline siliconsubstrate. Pad dielectric layer 22 and hard mask 24 are formed oversubstrate 20. In accordance with embodiments, pad dielectric layer 22 isformed of a nitride such as silicon nitride, and hard mask 24 is formedof an oxide such as silicon oxide. In alternative embodiments, paddielectric layer 22 is formed of an oxide such as silicon oxide, andhard mask 24 is formed of a nitride such as silicon nitride. In yetother embodiments, pad dielectric layer 22 and hard mask 24 are formedof different materials selected from the materials including, and notlimited to, silicon carbide, silicon oxynitride, silicon oxide, andsilicon nitride, providing pad dielectric layer 22 and hard mask 24 areformed of different materials that have a high etching selectivity.

A plurality of layers is formed over hard mask 24. In some exemplaryembodiments, the plurality of layers includes nitride layer 26 over hardmask 24, amorphous silicon layer 28 over nitride layer 26, oxide layer30 over amorphous silicon layer 28, and amorphous silicon layer 32 overoxide layer 30. Throughout the description, amorphous silicon layer 32is also referred to as a pattern-reservation layer since it is used totemporarily preserve a pattern of nanowires. Nitride layer 26 maycomprise silicon nitride in accordance with some embodiments, whileother dielectric layers different from the overlying material (such asamorphous silicon) and the underlying material (such as oxide) may alsobe used. It is appreciated that the layers illustrated in FIG. 1 isexemplary. In alternative embodiments, different layers may be formedover substrate 20, and the number of layers may also be different fromwhat is shown in FIG. 1.

In accordance with some embodiments, photo resist 34 is formed overamorphous silicon layer 32, and is then patterned. In alternativeembodiments, instead of forming a single photo resist 34, a double layeror a tri-layer is formed. For example, photo resist 34 may be replacedwith a tri-layer (not shown), which includes an under layer, a middlelayer over the under layer, and upper layer over the middle layer. Insome embodiments, the under layer and the upper layer may be formed ofphoto resists, which are organic materials. The middle layer may includethe mix of silicon and an inorganic material. The middle layer has ahigh etching selectivity with relative to the upper layer and the underlayer, and hence the upper layer may be used as the etching mask for thepatterning of the middle layer, and the middle layer may be used as theetching mask for the patterning of the under layer.

After the patterning, photo resist 34 includes a plurality of photoresist strips (also referred to using reference notation 34) havinglengthwise directions in the X direction, which is a horizontaldirection that is also parallel to the major surface 20A of substrate20. FIG. 1 also illustrates the Y direction that is in the samehorizontal plane as the X direction, wherein the X direction and the Ydirection are perpendicular to each other. The plurality of photo resiststrips 34 is parallel to each other, and may have equal widths W1 andequal distances D1. In some embodiments, width W1 and distance D1 areclose to, or equal to, the minimum width and distance allowed by thetechnology for developing photo resist 34. Width W and distance D1 maybe equal to each other or different from each other.

A pattering process is the performed using photo resist strips 34 as anetching mask. As a result, amorphous silicon layer 32 is patterned,resulting in amorphous silicon strips 32′ as shown in FIG. 2. Siliconstrips 32′ have lengthwise directions extending in the X direction.Amorphous silicon strips 32′ act as mandrels in the subsequentprocesses. Photo resist strips 34 are either consumed during thepatterning of amorphous silicon layer 32 or removed after the patterningof amorphous silicon layer 32.

Next, as shown in FIG. 3, spacer layer 48 is deposited using a conformaldeposition method. In some embodiments, spacer layer 48 is depositedusing Atomic Layer Deposition (ALD), which forms spacer layer 48 as ahigh quality film that has a low etching rate. The ALD may be performedusing DiChloroSilane (DCS) and ammonia as precursors, and the resultingspacer layer 48 includes silicon nitride or silicon-rich nitride. Inalternative embodiments, other conformal deposition methods such asLow-Pressure Chemical Vapor Deposition (LPCVD) may be performed.Thickness T1 of spacer layer 48 is smaller than a half of, and may beclose to about a third of, distance D1 in some exemplary embodiments.

Referring to FIG. 4, the horizontal portions of spacer layer 48 as inFIG. 3 are removed, for example, through an anisotropic etching step.The vertical portions of spacer layer 48 are left, and are referred toas spacers 48′ hereinafter. Spacers 48′ also have lengthwise directionsin the X direction. Next, amorphous silicon strips 32′ (FIG. 3) areremoved in an etching step, and spacers 48′ remain.

Next, referring to FIG. 5, oxide layer 30 (FIG. 4) is etched usingspacers 48′ as an etching mask, resulting in oxide strips 30′. Duringthe etching process, spacers 48′ are partially or fully consumed. Next,oxide strips 30′ (and spacers 48′ if not fully consumed yet) are used asan etching mask to etch the underlying amorphous silicon layer 28, andthe resulting structure is shown in FIG. 6. The remaining portions ofamorphous silicon layer 28 include a plurality of amorphous siliconstrips 28′ having lengthwise directions in the X direction. In someembodiments, after the formation of silicon strips 28′, oxide strips 30′have portions remaining over amorphous silicon strips 28′ to ensure thatthe thickness of amorphous silicon strips 28′ is not reduced during itspatterning. In alternative embodiments, oxide strips 30′ are fullyconsumed after the formation of amorphous silicon strips 28′. In theseembodiments, however, the thickness of amorphous silicon strips 28′ issubstantially not reduced. Otherwise, the nanowires 28′ as shown in FIG.14A may not have enough height for the patterning of substrate 20.

The steps illustrated in FIGS. 1 through 4 are referred to as a firstself-aligned multi-patterning process since the patterns of spacers 48′are self-aligned to the patterns of photo resist strips 34 (FIG. 1), andthe number of spacers 48′ is doubled compared to the number of photoresist strips 34. The multi-patterning process may be a doublepatterning process (as illustrated in the exemplary embodiments). Inalternative embodiments, multi-patterning process may be atriple-patterning process, a quadruple-patterning process, etc.

FIGS. 7 through 13 illustrate a second self-aligned multi-patterningprocess to further pattern amorphous silicon strips 28′ as nanowires.Referring to FIG. 7, filling material 50 is formed to fill the spacesbetween amorphous silicon strips 28′. The top surface of fillingmaterial 50 is higher than the top surface of amorphous silicon strips28′, and may be higher than or level with the top surfaces of oxidestrips 30′. In some exemplary embodiments, filling material 50 comprisesa flowable oxide, which may be formed using Flowable Chemical VaporDeposition (FCVD). Filling material 50 may also be silicon oxide. Inalternative embodiments, spin-on coating may be used to form fillingmaterial 50. The top surface of filling material 50 is leveled, forexample, by adopting a Chemical Mechanical Polish (CMP).

Next, as shown in FIG. 8, amorphous silicon layer 51 is formed overfilling material 50, followed by the formation of photo resist strips52. Photo resist strips 52 have a lengthwise direction. In someembodiments, the lengthwise direction of photo resist strips 52 is inthe Y direction that is perpendicular to the X direction. The Ydirection is a horizontal direction parallel to major surface 20A ofsubstrate 20. In alternative embodiments, the lengthwise direction ofphoto resist strips 52 is in direction C, which is neither parallel norperpendicular to either of the X direction and the Y direction. The Cdirection and the X direction form angle θ, which is between, and notequal to, 0 degree and 90 degrees.

The plurality of photo resist strips 52 is parallel to each other, andmay have equal widths W2 and equal distances D2. In some embodiments,width W2 and distance D2 are close to, or equal to, the minimum widthand distance allowed by the technology for developing photo resiststrips 52. Width W2 and distance D2 may be equal to each other ordifferent from each other. Furthermore, widths W1 (FIG. 1) and W2 (FIG.8) may be equal to (or different from) each other, and distances D1(FIG. 1) and D2 (FIG. 8) may be equal to (or different from) each other.

Next, amorphous silicon layer 51 is patterned using photo resist strips52 as an etching mask. Amorphous silicon strips 51′ are thus formed, asshown in FIG. 9. The patterning stops on filling material 50 and oxidestrips 30′. Photo resist strips 52 are consumed, at least partially,during the patterning. The subsequent steps as shown in FIGS. 10 and 11are similar to what are shown in FIGS. 3 and 4, respectively. In FIG.10, spacer layer 58 is formed on the top surfaces and the sidewalls ofamorphous silicon strips 51′. Spacer layer 58 may be essentially thesame as spacer layer 48, as shown in FIG. 3.

Next, the horizontal portions of spacer layer 58 are removed, leavingspacers 58′, as shown in FIG. 11. Spacers 58′ have lengthwise directionsin the C direction or the Y direction. Amorphous silicon strips 51′(FIG. 10) are also removed, and hence are hence referred to as mandrelshereinafter.

FIG. 12 illustrates the patterning of oxide strips 30′ and fillingmaterial 50 using spacers 58′ as an etching mask. The patterning stopson layer 26, which is used as an etch stop layer. Amorphous siliconstrips 28′ have some portions covered by the remaining portions of oxidestrips 30′ and filling material 50, and some other portions not coveredby the remaining portions of oxide strips 30′ and filling material 50.Spacers 58′ are consumed, at least partially, and possibly fully, duringthe patterning of oxide strips 30′ and filling material 50.

Next, as shown in FIG. 13, the remaining portions of oxide strips 30′and filling material 50 are used as an etching mask to etch amorphoussilicon strips 28′. As a result, a plurality of strips are formedextending in the C direction or the Y direction, with each of the stripsincluding the remaining portions of oxide strips 30′, amorphous siliconstrips 28′, and filling material 50.

As shown in FIGS. 6 and 13, amorphous silicon layer 28 (FIG. 1) waspatterned twice in two self-aligned double patterning steps, once in theX direction (FIG. 6), and once in the C direction or the Y direction(FIG. 13). Accordingly, the remaining portions of amorphous siliconstrips 28′ form a plurality of nanowires. The remaining portions ofoxide strips 30′ and filling material 50 are then removed. FIGS. 14A and14B illustrate a perspective view and a top view illustrating theresulting nanowires 28″ after the remaining portions of oxide strips 30′and filling material 50 are removed.

FIGS. 15A through 16B illustrate the thinning and rounding of nanowires28″ in accordance with some exemplary embodiments. Referring to FIGS.15A (a perspective view) and 15B (a top view), an oxidation is performedto oxidize the outer portions of nanowires 28″. Accordingly, oxidelayers 60 are formed to surround, and on the top surface of, theremaining inner portions of nanowires 28″. Since the oxidation rate atthe corners is higher than the oxidation rate on flat surfaces ofnanowires 28″, the resulting nanowires 28″ are more rounded. FIGS. 16Aand 16B illustrate a perspective view and a top view, respectively, ofthe resulting nanowires 28″ after the removal of oxide layers 60. Inalternative embodiments, the steps in FIGS. 15A through 16B are skipped.

FIGS. 17A through 18B illustrate the removal of some undesirablenanowires 28″ in accordance with some embodiments. For example, in FIGS.17A and 17B, which illustrate a perspective view and a top view,respectively, photo resist 62 is formed to cover some of nanowires 28″,while leaving some other nanowires 28″ not covered. The un-coverednanowires 28″ are then etched, followed by the removal of photo resist62. The resulting structure is shown in FIGS. 18A and 18B, whichillustrate a perspective view and a top view, respectively.

Referring to FIGS. 19A and 19B, which illustrate a perspective view anda top view, respectively, nanowires 28″ are used as an etching mask toetch the underlying nitride layer 26, so that nanowires 26′ are formed.Next, as shown in FIGS. 20A and 20B, respectively, a large photo resist64 is formed over hard mask 24. Large photo resist 64 is used to formpatterns that are larger than nanowires 28″ since nanowires 26′ and 28″may have a uniform size.

In a subsequent step, the patterns of nanowires 28″, nanowires 26′, andphoto resist 64 are transferred into hard mask 24 by etching. Theresulting structure is shown in FIGS. 21A and 21B, which illustrate aperspective view and a top view, respectively. Nanowires 24′ are thusformed to include the remaining portions of hard mask 24.

Next, as shown in FIGS. 22A and 22B, which illustrate a perspective viewand a top view, respectively, pad dielectric layer 22 and substrate 20are etched using the overlying patterned features such as nanowires 24′,26′, and 28″ as in FIGS. 21A and 21B. As a result, nano patterns 22′ areformed. Furthermore, portions of substrate 20 that are protected bynanowires 24′ and nanowires 26′ form semiconductor nanowires 20′.Semiconductor nanowires 20′ form vertical nanowires with lengthwisedirections perpendicular to the major top surface and bottom surface ofsubstrate 20. The height H1 of semiconductor nanowires 20′ is determinedby the intended usage of semiconductor nanowires 20′. At the timesemiconductor nanowires 20′ are formed, semiconductor post 67, which isa portion of the etched semiconductor substrate 20, is also formed dueto the formation of large photo resist pattern 64.

In subsequent steps, the remaining portions of nanowires 24′ andnanowires 26′ are removed in etching steps. Semiconductor nanowires 20′may then be used to form integrated circuit devices such as transistors.For example, FIG. 23 illustrates a cross-sectional view of transistor 68formed based on nanowires 20′. In accordance with some exemplaryembodiments, transistor 68 includes a plurality of nanowires 20′, eachincluding source/drain regions 70 and 72, and channel region 74 betweensource/drain regions 70 and 72. The plurality of source/drain regions 70includes the top portions of nanowires 20′, and is electricallyinterconnected through conductive layer 76, which is further connectedto source/drain contact plug 78. The plurality of source/drain regions72, which includes the bottom portions of nanowires 20′, isinterconnected through conductive layer 80, which is further connectedto source/drain contact plug 82. A plurality of gate dielectrics 84 isformed to surround channel regions 74, which are the middle portions ofnanowires 20′. Conductive layers 86 are formed to surround the pluralityof gate dielectrics 84. Conductive layers 86 act as the gate electrodesof transistor 68. Conductive layers 86 are connected to conductive layer87, which is further connected to gate contact plug 88. Accordingly,transistor 68 includes a plurality of sub-transistors, each formed basedon one of nanowires 20′, with the plurality of sub-transistors connectedin parallel.

FIG. 24 illustrates a top view of transistor 68 in accordance with someembodiments. Transistor 68 includes a plurality of semiconductornanowires 20′ forming the sub-transistors of transistor 68. Contactplugs 78, 82, and 88 are also illustrated as an example, and areconnected to source or drain regions (denoted as S/D and D/S regions).In FIG. 24, the C direction (also refer to FIG. 9) is parallel to the Ydirection. Semiconductor nanowires 20′ are aligned to lines 90 and 92,wherein lines 90 are perpendicular to lines 92. Due to the self-alignedmulti-patterning process for forming semiconductor wires, semiconductornanowires 20′ are aligned to a plurality of rows 90 and columns 92. Thepitches of the rows are illustrated as pitches P1 and P2. One of thepitches P1 and P2 is determined by one of the width W1 and distance D1(FIG. 1), and the other one of the pitches P1 and P2 is determined bythe other one of the width W1 and distance D1. Accordingly, as shown inFIG. 24, pitches P1 and P2 are arranged in an alternating layout.

Similarly, the pitches of the columns of semiconductor nanowires 20′ areillustrated as pitches P3 and P4. One of the pitches P3 and P4 isdetermined by one of the width W2 and distance D2 (FIG. 8), and theother one of the pitches P3 and P4 is determined by the other one of thewidth W2 and distance D2. Accordingly, pitches P3 and P4 are arranged inan alternating layout.

FIG. 25 illustrates a top view of transistor 68 in accordance withalternative embodiments. These embodiments are similar to theembodiments in FIG. 24, wherein semiconductor nanowires 20′ are alignedto lines 90 and 92. The semiconductor nanowires 20′ aligned to lines 90form rows, and the semiconductor nanowires 20′ aligned to lines 92 formcolumns. Lines (rows) 90 and (column) 92, however, are neitherperpendicular to each other nor parallel to each other. Lines 90 are inthe X direction, and lines 92 are in the C direction. The X directionand the C direction form angle θ, which is between, and not including,zero degree and 90 degrees. Again, pitches P1 and P2 are allocatedalternatingly, and pitches P3 and P4 are allocated alternatingly.

The embodiments of the present disclosure have some advantageousfeatures. By using self-aligned multi-patterning process in twodirections to form the patterns of nanowires, the sizes of thesemiconductor nanowires may be reduced to smaller than the limit of thelithography process. The risk of overlay misalignment between patternsis low.

In accordance with some embodiments of the present disclosure, a methodincludes forming a pattern-reservation layer over a semiconductorsubstrate. The semiconductor substrate has a major surface. A firstself-aligned multi-patterning process is performed to pattern apattern-reservation layer. The remaining portions of thepattern-reservation layer include pattern-reservation strips extendingin a first direction that is parallel to the major surface of thesemiconductor substrate. A second self-aligned multi-patterning processis performed to pattern the pattern-reservation layer in a seconddirection parallel to the major surface of the semiconductor substrate.The remaining portions of the pattern-reservation layer includepatterned features. The patterned features are used as an etching maskto form semiconductor nanowires by etching the semiconductor substrate.

In accordance with alternative embodiments of the present disclosure, amethod includes forming a pattern-reservation layer over a semiconductorsubstrate, etching the pattern-reservation layer using a firstself-aligned multi-patterning process to form pattern-reservationstrips, forming a filling material to fill spacers between thepattern-reservation strips, and etching the pattern-reservation stripsusing a second self-aligned multi-patterning process. The remainingportions of the pattern-reservation strips form patterned features. Eachof the first self-aligned multi-patterning process and the secondself-aligned multi-patterning process includes forming mandrel strips,wherein the mandrel strips of the first self-aligned multi-patterningprocess have a first lengthwise direction different from a secondlengthwise direction of the mandrel strips of the second self-alignedmulti-patterning process. Each of the first self-alignedmulti-patterning process and the second self-aligned multi-patterningprocess further includes forming spacers on sidewalls of the mandrelstrips, and removing the mandrel strips. The mandrel strips are used asan etching mask to etch the pattern-reservation layer in the firstself-aligned multi-patterning process and the second self-alignedmulti-patterning process. The patterned features are used as an etchingmask to form semiconductor nanowires by etching the semiconductorsubstrate.

In accordance with yet alternative embodiments of the presentdisclosure, an integrated circuit structure includes a semiconductorsubstrate, and a plurality of semiconductor nanowires over thesemiconductor substrate. The plurality of semiconductor nanowires isdisposed as a plurality of rows and a plurality of columns. Theplurality of rows has a first pitch and a second pitch different fromthe first pitch, wherein the first pitch and the second pitch areallocated in an alternating pattern. The plurality of columns has athird pitch and a fourth pitch different from the third pitch, whereinthe third pitch and the fourth pitch are allocated in an alternatingpattern.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming apattern-reservation layer over a semiconductor substrate, wherein thesemiconductor substrate comprises a major surface; performing a firstself-aligned multi-patterning process to pattern a pattern-reservationlayer, wherein remaining portions of the pattern-reservation layercomprise pattern-reservation strips extending in a first direction thatis parallel to the major surface of the semiconductor substrate;performing a second self-aligned multi-patterning process to pattern thepattern-reservation layer in a second direction parallel to the majorsurface of the semiconductor substrate, wherein remaining portions ofthe pattern-reservation layer comprise patterned features; and using thepatterned features as an etching mask to form semiconductor nanowires byetching the semiconductor substrate.
 2. The method of claim 1, whereineach of the first self-aligned multi-patterning process and the secondself-aligned multi-patterning process comprises: forming a mandrellayer; etching the mandrel layer to form mandrel strips, wherein themandrel strips of the first self-aligned multi-patterning process havelengthwise directions in the first direction; forming a spacer layerover the mandrel layer; removing horizontal portions of the spacerlayer, wherein vertical portions of the mandrel layer form spacers;removing the mandrel strips; and etching the pattern-reservation layerusing the mandrel strips as an etching mask.
 3. The method of claim 2further comprising forming an oxide layer over the pattern-reservationlayer, wherein during the first self-aligned multi-patterning process,the oxide layer is patterned.
 4. The method of claim 3, wherein afterthe first self-aligned multi-patterning process, the oxide layercomprises remaining oxide strips over the pattern-reservation strips,and wherein the method further comprises filling spaces between theremaining oxide strips with a filling material, with the fillingmaterial being patterned in the second self-aligned multi-patterningprocess.
 5. The method of claim 1, wherein the first direction isperpendicular to the second direction.
 6. The method of claim 1, whereinthe first direction is neither perpendicular to nor parallel to thesecond direction.
 7. The method of claim 1 further comprising, after thefirst self-aligned multi-patterning process and the second self-alignedmulti-patterning process, forming a photo resist over the semiconductorsubstrate, wherein in the etching the semiconductor substrate, a patternof the photo resist is transferred into the semiconductor substrate. 8.A method comprising: forming a pattern-reservation layer over asemiconductor substrate; etching the pattern-reservation layer using afirst self-aligned multi-patterning process to form pattern-reservationstrips; forming a filling material to fill spacers between thepattern-reservation strips; etching the pattern-reservation strips usinga second self-aligned multi-patterning process, wherein remainingportions of the pattern-reservation strips form patterned features,wherein each of the first self-aligned multi-patterning process and thesecond self-aligned multi-patterning process comprises: forming mandrelstrips, wherein the mandrel strips of the first self-alignedmulti-patterning process have a first lengthwise direction differentfrom a second lengthwise direction of the mandrel strips of the secondself-aligned multi-patterning process; forming spacers on sidewalls ofthe mandrel strips; and removing the mandrel strips, wherein the mandrelstrips are used as an etching mask to etch the pattern-reservation layerin the first self-aligned multi-patterning process and the secondself-aligned multi-patterning process; and using the patterned featuresas an etching mask to form semiconductor nanowires by etching thesemiconductor substrate.
 9. The method of claim 8, wherein the formingthe mandrel strips comprises: forming an amorphous silicon layer; andpatterning the amorphous silicon layer.
 10. The method of claim 8further comprising: forming a pad dielectric layer over thesemiconductor substrate; forming a hard mask over the pad dielectriclayer, with the hard mask being under the pattern-reservation layer; andpatterning the hard mask and the pad dielectric layer using thepatterned features as the etching mask.
 11. The method of claim 8,wherein the first lengthwise direction is perpendicular to the secondlengthwise direction.
 12. The method of claim 8, wherein the firstlengthwise direction is neither perpendicular to nor parallel to thesecond lengthwise direction.
 13. The method of claim 8 furthercomprising forming a transistor, wherein a middle portion of one of thesemiconductor nanowires forms a channel region of the transistor, andwherein an upper portion and a lower portion of the one of thesemiconductor nanowires form source and drain regions of the transistor.14. An integrated circuit structure comprising: a semiconductorsubstrate; and a plurality of semiconductor nanowires over thesemiconductor substrate, wherein the plurality of semiconductornanowires is disposed as a plurality of rows and a plurality of columns,and wherein: the plurality of rows has a first pitch and a second pitchdifferent from the first pitch, wherein the first pitch and the secondpitch are allocated in an alternating pattern; and the plurality ofcolumns has a third pitch and a fourth pitch, wherein the third pitchand the fourth pitch are allocated in an alternating pattern.
 15. Theintegrated circuit structure of claim 14, wherein the fourth pitch isdifferent from the third pitch.
 16. The integrated circuit structure ofclaim 14, wherein the first pitch is equal to the third pitch, andwherein the second pitch is equal to the fourth pitch.
 17. Theintegrated circuit structure of claim 14 comprising a transistor,wherein a middle portion of one of the semiconductor nanowires forms achannel region of the transistor, and wherein an upper portion and alower portion of the one of the semiconductor nanowires form source anddrain regions of the transistor.
 18. The integrated circuit structure ofclaim 14 further comprising a plurality of transistors identical to thetransistor, wherein source regions of the plurality of transistors areinterconnected, drain regions of the plurality of transistors areinterconnected, and gate electrodes of the plurality of transistors areinterconnected.
 19. The integrated circuit structure of claim 14,wherein the semiconductor nanowires have lengthwise directionsperpendicular to a major top surface of the semiconductor substrate. 20.The integrated circuit structure of claim 14, wherein the plurality ofrows is neither perpendicular to nor parallel to the plurality ofcolumns.